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Proceedings Paper

Dynamic operation of laser diode accompanied by hot-carrier effects
Author(s): Boris E. Golubev; Vladimir M. Chistyakov; Serguei A. Gurevich
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Paper Abstract

We propose a relatively simple dynamic laser model based upon continuity equations for electron and hole concentrations, energy balance equation and a set of rate equations describing spectrally dependent photon density. These equations are solved in a self-consistent way together with Poisson equation. The model assumes that characteristic times of establishing the carrier temperature are shorter than those of carrier-to-phonon interaction. Using this model, the dynamic response of AlGaAs/GaAs double heterostructure laser is analyzed at current densities up to approximately 6 X 104 A/cm2. It is shown that the reaction of carrier temperature to the appearance of optical pulse is spatially nonuniform and is determined by the balance of the heating induced by the stimulated emission and the cooling associated with carrier and heat transfer across the active layer.

Paper Details

Date Published: 9 March 2001
PDF: 11 pages
Proc. SPIE 4354, Laser Optics 2000: Semiconductor Lasers and Optical Communication, (9 March 2001); doi: 10.1117/12.418829
Show Author Affiliations
Boris E. Golubev, A.F. Ioffe Physico-Technical Institute (Russia)
Vladimir M. Chistyakov, A.F. Ioffe Physico-Technical Institute (Russia)
Serguei A. Gurevich, A.F. Ioffe Physico-Technical Institute (Russia)


Published in SPIE Proceedings Vol. 4354:
Laser Optics 2000: Semiconductor Lasers and Optical Communication
Serguei A. Gurevich; Nikolay N. Rosanov, Editor(s)

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