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Proceedings Paper

Waveguide optics of new short-wavelength laser diodes
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Paper Abstract

The optical confinement and related issues are considered of novel semiconductor laser structures based on III-group nitrides. The approach of normal modes is used in an analysis of the InGaN-based laser diode that is actually a set of coupled waveguides. Laser emission mode is found to be subjected to internal mode coupling. When phase velocities are close in coupled modes, the interaction is resonantly strong, and produces a significant modification of both the spatial mode configuration and laser threshold. Particularly, the modal gain can be quenched totally keeping the material gain at high level. Therefore such resonance is an important issue in the nitride-based laser designing. Also, the modeling of nitride-based VCSEL is performed using an effective frequency method and laser operation is simulated numerically. The thermal lens effect is shown to be important in the mode formation.

Paper Details

Date Published: 9 March 2001
PDF: 12 pages
Proc. SPIE 4354, Laser Optics 2000: Semiconductor Lasers and Optical Communication, (9 March 2001); doi: 10.1117/12.418823
Show Author Affiliations
Petr Georgievich Eliseev, Univ. of New Mexico and P.N. Lebedev Physical Institute (United States)


Published in SPIE Proceedings Vol. 4354:
Laser Optics 2000: Semiconductor Lasers and Optical Communication
Serguei A. Gurevich; Nikolay N. Rosanov, Editor(s)

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