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Proceedings Paper

GaN-based violet-blue laser diodes
Author(s): Shigeki Hashimoto; H. Nakajima; Katsunori Yanashima; Tsunenori Asatsuma; Takashi Yamaguchi; H. Yoshida; Masafumi Ozawa; K. Funato; S. Tomiya; T. Miyajima; Toshimasa Kobayashi; Shiro Uchida; Masao Ikeda
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Paper Abstract

High power GaN-based laser diodes (LDs) are very desirable for various applications such as optical storage systems. We have obtained GaN films of low dislocation density using epitaxial lateral overgrowth technique and the raised- pressure metalorganic chemical vapor deposition technique. Dislocation density of the improved GaN is about 107 cm-2. Optimized GaN-based LDs fabricated on the improved GaN films have operated up to 35 mW without any kink. The lifetime is more than 500 hours with a constant power of 20 mW at 25 degree(s)C under continuous wave conditions. Furthermore, we have introduced buried-ridge laser diode structure in order to control the optical transverse mode. The features of the far field patterns of LDs with AlGaN burying layers indicate their controllability.

Paper Details

Date Published: 9 March 2001
PDF: 11 pages
Proc. SPIE 4354, Laser Optics 2000: Semiconductor Lasers and Optical Communication, (9 March 2001); doi: 10.1117/12.418812
Show Author Affiliations
Shigeki Hashimoto, Sony Corp. (Japan)
H. Nakajima, Sony Corp. (Japan)
Katsunori Yanashima, Sony Corp. (Japan)
Tsunenori Asatsuma, Sony Corp. (Japan)
Takashi Yamaguchi, Sony Corp. (Japan)
H. Yoshida, Sony Corp. (Japan)
Masafumi Ozawa, Sony Corp. (Japan)
K. Funato, Sony Corp. (Japan)
S. Tomiya, Sony Corp. (Japan)
T. Miyajima, Sony Corp. (Japan)
Toshimasa Kobayashi, Sony Corp. (Japan)
Shiro Uchida, Sony Shiroishi Semiconductor Inc. (Japan)
Masao Ikeda, Sony Shiroishi Semiconductor Inc. (Japan)

Published in SPIE Proceedings Vol. 4354:
Laser Optics 2000: Semiconductor Lasers and Optical Communication
Serguei A. Gurevich; Nikolay N. Rosanov, Editor(s)

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