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Proceedings Paper

Design and stabilization of the extended-cavity semiconductor laser
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Paper Abstract

We present a tunable extended-cavity semiconductor laser system based on the Littman configuration emitting in the visible region of spectra with the wavelength close to the 633 nm of He-Ne lasers. It has been frequency stabilized to Doppler free hyperfine transmission in molecular iodine. The stability was measured compared to the reference He-Ne-I2 laser system, the present most commonly used laser primary standard. While the semiconductor laser was locked on components of the P(33) 6-3 transmission close enough to the reference R(127) 11-5 line to arrange a beat frequency counting. A relative stability of 4 by 10-12 over a 100 s integration time was achieved. The laser configuration allowed a mode-hop free tuning over a range including a group of strong overlapping transitions R(60) 8-4, R(125) 9- 4 and P(54) 8-4 with higher signal-to-noise ratio.

Paper Details

Date Published: 7 March 2001
PDF: 6 pages
Proc. SPIE 4356, 12th Czech-Slovak-Polish Optical Conference on Wave and Quantum Aspects of Contemporary Optics, (7 March 2001); doi: 10.1117/12.417845
Show Author Affiliations
Josef Lazar, Institute of Scientific Instruments (Czech Republic)
Ondrej Cip, Institute of Scientific Instruments (Czech Republic)
Petr Jedlicka, Institute of Scientific Instruments (Czech Republic)


Published in SPIE Proceedings Vol. 4356:
12th Czech-Slovak-Polish Optical Conference on Wave and Quantum Aspects of Contemporary Optics
Jan Perina; Miroslav Hrabovsky; Jaromir Krepelka, Editor(s)

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