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Proceedings Paper

Deposition and measurements of antireflection coatings for semiconductor lasers
Author(s): Josef Lazar; Pavel Pokorny
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Paper Abstract

We present experimental results obtained by deposition of single layer and double-layer system made by means of electron-beam vacuum evaporation technique. We oriented our effort to short-wavelength 635-633 nm laser diodes emitting close to the wavelength of traditional He-Ne lasers with an intention to use them in extended-cavity laser design for metrological purposes. The resulting reflectivities were evaluated by measuring a testing plate of GaAs and by measuring a 'modulation depth' of a coated diode emission spectra. Our best results were reflectivities well below 10-4 and the repeatability of the deposition process in a range not exceeding 2 by 10-4.

Paper Details

Date Published: 7 March 2001
PDF: 6 pages
Proc. SPIE 4356, 12th Czech-Slovak-Polish Optical Conference on Wave and Quantum Aspects of Contemporary Optics, (7 March 2001); doi: 10.1117/12.417844
Show Author Affiliations
Josef Lazar, Institute of Scientific Instruments (Czech Republic)
Pavel Pokorny, Institute of Scientific Instruments (Czech Republic)


Published in SPIE Proceedings Vol. 4356:
12th Czech-Slovak-Polish Optical Conference on Wave and Quantum Aspects of Contemporary Optics
Jan Perina; Miroslav Hrabovsky; Jaromir Krepelka, Editor(s)

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