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Proceedings Paper

Modeling and numerical simulation of the optical intensity distribution in double-heterostructure semiconductor lasers
Author(s): Ladislav Kuna; Frantisek Uherek
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Paper Abstract

The optical intensity distribution is theoretically studied in a double-heterostructure (DH), AlxGa1-xAs- GaAs material system using PICS3D software simulation. The electrical and optical equations to describe the behavior of semiconductor lasers are reviewed. To investigate the optical and carrier confinement in basic DH, the index x of AlAs mole fraction is varied. From computational results and technological considerations, index x 0.35 is chosen for a dielectric slab waveguide. In order to accomplish optical and electrical confinement in the lateral direction, oxide- stripe and ridge waveguide geometry is treated. The light verus current characteristics, electron concentration profiles, optical intensity distribution, as well as current flow are evaluated. Finally, it follows from the computed characteristics that optical and carrier confinement in transverse and lateral directions is accomplished for ridge- waveguide geometry with a ridge height of 540 nm.

Paper Details

Date Published: 7 March 2001
PDF: 8 pages
Proc. SPIE 4356, 12th Czech-Slovak-Polish Optical Conference on Wave and Quantum Aspects of Contemporary Optics, (7 March 2001); doi: 10.1117/12.417842
Show Author Affiliations
Ladislav Kuna, International Laser Ctr. (Slovak Republic)
Frantisek Uherek, International Laser Ctr. (Slovak Republic)


Published in SPIE Proceedings Vol. 4356:
12th Czech-Slovak-Polish Optical Conference on Wave and Quantum Aspects of Contemporary Optics
Jan Perina; Miroslav Hrabovsky; Jaromir Krepelka, Editor(s)

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