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Proceedings Paper

Bandgap of (CdTe)m/(Cd1-xMnxTe)n superlattices
Author(s): S. V. Melnichuk; Ya. I. Mikhailevski; Ilary M. Rarenko; I. M. Yurijchuk
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Paper Abstract

Band structure of [100] (CdTe)m/(Cd1-xMnxTe)n superlattices is calculated theoretically in dependence of semiconductor CdTe and Cd1-xMnxTe layers width and magnetic component concentration. Calculations are carried out within semiempirical tight-binding method, which includes s-, p-orbitals of each atom and cation d-orbitals. Mn 3d-states contribution to the formation of the superlattice energy spectrum is analyzed. It is shown that a superlattice on the base of diluted magnetic semiconductor Cd1-xMnxTe with small width of CdTe layers is a semiconductor materials with the similar magnetic properties but with more complicated dependence of crystal forbidden band gap on magnetic component concentration.

Paper Details

Date Published: 22 February 2001
PDF: 4 pages
Proc. SPIE 4355, Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (22 February 2001); doi: 10.1117/12.417807
Show Author Affiliations
S. V. Melnichuk, Chernivtsi State Univ. (Ukraine)
Ya. I. Mikhailevski, Chernivtsi State Univ. (Ukraine)
Ilary M. Rarenko, Chernivtsi State Univ. (Ukraine)
I. M. Yurijchuk, Chernivtsi State Univ. (Ukraine)


Published in SPIE Proceedings Vol. 4355:
Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics
Fiodor F. Sizov, Editor(s)

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