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Proceedings Paper

Positive persistent photoconductivity in p-type Al0,5Ga0,5As/GaAs/Al0,5Ga0,5As
Author(s): W. Kraak; N. Ya. Minina; A. M. Savin; E. V. Bogdanov; A. A. Ilievsky; C. B. Sorensen; Ole Per Hansen
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Paper Abstract

Illumination of a double (formula available in paper) As heterostructure by a red light emitting diode results in a negative photoconductivity that, after the diode is switched off, slowly relaxes to a positive persistent photoconductivity, characterized by about 1.5 increase of a two-dimensional hole concentration. This metastable state may be explained in a frame work of the model in which deep electron traps are supposed to be located above the Fermi level on the inverted heterointerface.

Paper Details

Date Published: 22 February 2001
PDF: 4 pages
Proc. SPIE 4355, Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (22 February 2001); doi: 10.1117/12.417804
Show Author Affiliations
W. Kraak, Humboldt Univ. (Germany)
N. Ya. Minina, M.V. Lomonosov Moscow State Univ. (Russia)
A. M. Savin, M.V. Lomonosov Moscow State Univ. (Russia)
E. V. Bogdanov, M.V. Lomonosov Moscow State Univ. (Russia)
A. A. Ilievsky, M.V. Lomonosov Moscow State Univ. (Russia)
C. B. Sorensen, Niels Bohr Institute (Denmark)
Ole Per Hansen, Niels Bohr Institute (Denmark)


Published in SPIE Proceedings Vol. 4355:
Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics
Fiodor F. Sizov, Editor(s)

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