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Proceedings Paper

High infrared sensitivity of n-PbTe(Ga) thin films
Author(s): Boris A. Akimov; Vladislav A. Bogoyavlenskiy; Ludmila I. Ryabova; Vyacheslav N. Vasil'kov
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Paper Abstract

We present results of the studies of photoconductivity and transient processes in n-PbTe(Ga) epitaxial films of thickness approximately 0.2 micrometer prepared by the hot wall technique on BaF (formula available in paper) substrates. The photoelectric properties are investigated in the temperature range 4.2 - 300 K under infrared (IR) illumination by GaAs light-emitting diode with (lambda) equals 1 micrometer and by a white light lamp. The low-temperature measurements reveal the IR-photoconductivity threshold at TC approximately equals 150 K (for the flux density (formula available in paper), that exceeds by 40 K and 70 K the temperatures relevant to more thick films (approximately 2 micrometer) and to single crystals, respectively. This substantial increase of TC in thin films gives us an opportunity to estimate the recombination barrier of Ga impurity in PbTe.

Paper Details

Date Published: 22 February 2001
PDF: 4 pages
Proc. SPIE 4355, Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (22 February 2001); doi: 10.1117/12.417803
Show Author Affiliations
Boris A. Akimov, M.V. Lomonosov Moscow State Univ. (Russia)
Vladislav A. Bogoyavlenskiy, M.V. Lomonosov Moscow State Univ. (Russia)
Ludmila I. Ryabova, M.V. Lomonosov Moscow State Univ. (Russia)
Vyacheslav N. Vasil'kov, Research Development and Production Ctr. ORION (Russia)


Published in SPIE Proceedings Vol. 4355:
Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics

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