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Proceedings Paper

Chemical cutting process in narrow-gap semiconductors
Author(s): Myhailo Y. Kravetsky; Oleksandr V. Fomin
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Paper Abstract

For a case of chemical reactions of the first order the mathematical model of process of chemical cutting of crystals is advanced. It is showed, that the return speed of chemical cutting is equal to the sum of return speeds of such values, as velocity of a chemical reaction, velocity of delivery etchant and speed of diffusion of molecules of a reactant. At research of process of chemical cutting of crystals InSb the satisfactory coordination between experimental and theoretical results is obtained. The developed model can be used at designing of the equipment and for optimization of process of chemical cut.

Paper Details

Date Published: 22 February 2001
PDF: 6 pages
Proc. SPIE 4355, Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (22 February 2001); doi: 10.1117/12.417802
Show Author Affiliations
Myhailo Y. Kravetsky, Institute of Semiconductor Physics (Ukraine)
Oleksandr V. Fomin, Institute of Semiconductor Physics (Ukraine)


Published in SPIE Proceedings Vol. 4355:
Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics
Fiodor F. Sizov, Editor(s)

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