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Proceedings Paper

Polishing of InSb in K2Cr2O7-HBr-HCl (oxalic acid) solutions
Author(s): V. N. Tomashik; N. V. Kusiak; Z. F. Tomashik; S. G. Danylenko
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Paper Abstract

Dissolution of InAs in the K2Cr2O7-HBr-HCl (oxalic acid) solutions is studied in reproducible hydrodynamics conditions. The surfaces of equal etching rate are constructed using mathematical planning of experiment, and the limiting stages of the dissolution process are determined. The kinetic behavior of indicated semiconductors depending on the mixing rate and temperature of solution was investigated and it was shown that the dissolution of these semiconductor compounds in the solutions of the investigated systems is limited by the diffusion stages. The dissolution rates of InSb in such solutions distinguish weakly from each other and are within the interval of 0.5 - 6 micrometer/min. The solutions of K2Cr2O7-HBr-HCl (oxalic acid) systems can be employed for the developing of polishing solutions for the indium antimonide treatment with small etching rate.

Paper Details

Date Published: 22 February 2001
PDF: 5 pages
Proc. SPIE 4355, Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (22 February 2001); doi: 10.1117/12.417801
Show Author Affiliations
V. N. Tomashik, Institute of Semiconductor Physics (Ukraine)
N. V. Kusiak, Institute of Semiconductor Physics (Ukraine)
Z. F. Tomashik, Institute of Semiconductor Physics (Ukraine)
S. G. Danylenko, Institute of Semiconductor Physics (Ukraine)


Published in SPIE Proceedings Vol. 4355:
Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics
Fiodor F. Sizov, Editor(s)

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