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Proceedings Paper

In-situ kinetics study of gas phase formation in the system Ga/In-AsCl3-HCl-H2 by UV spectroscopy
Author(s): Valery A. Voronin; Sergey K. Guba; Marina A. Litvin; A. Yu. Kulikov
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Paper Abstract

In this paper we present the experimental results on kinetic research of a gas phase formation in the system Ga/In-AsCl3-HCl-H2 which we use for the preparation of high quality InP/InGaAs multilayers with thickness less than 100 nm by I -VPE method. This experimental data are received in-situ by UV-spectroscopy when combined In-Ga source is used. The analysis of kinetic processes in a zone of the source is necessary to understand the influence of such parameters as temperature, gas carrier flow rates, In/Ga source surface area, input concentrations of chloride containing components on composition of gas phase. It is shown that the going completeness of the heterogeneous reactions strongly depends on the Ga-In source surface area and input flow rate under other equal parameters. Besides analyzing of the gas phase composition it is necessary to take into account GaCl (liq.) equals GaCl (g) equilibrium at the temperature below 800 K.

Paper Details

Date Published: 22 February 2001
PDF: 8 pages
Proc. SPIE 4355, Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (22 February 2001); doi: 10.1117/12.417800
Show Author Affiliations
Valery A. Voronin, Lviv Polytechnic State Univ. (Ukraine)
Sergey K. Guba, Lviv Polytechnic State Univ. (Ukraine)
Marina A. Litvin, Institute of Physics and Mechanics (Ukraine)
A. Yu. Kulikov, A.F. Ioffe Physico-Technical Institute (Russia)


Published in SPIE Proceedings Vol. 4355:
Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics
Fiodor F. Sizov, Editor(s)

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