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Proceedings Paper

Laser-assisted evaporation and deposition of MnxHg1-xTe epitaxial layers
Author(s): Volodymyr Kavych; Leonid G. Mansurov; Mariya Lozynska; Volodymyr K. Pysarevsky
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Paper Abstract

MnxHg1-xTe (x equals 0.1 - 0.13) layers were deposited on CdTe (111) substrates from MnxHg1-xTe (average composition of x equals 0.14) by a pulsed YAG:Nd laser with scanning of the laser beam over the source material. Layers were deposited at different substrate temperatures (from the room temperature to 250 degrees Celsius). It has been established that epitaxial growth of MnxHg1-xTe layers occurs in the narrow range of substrate temperature from 180 to 200 degrees Celsius. As-grown layers are n-type with electron mobility of (mu) equals (0.7-2.8)X103 cm2/Vc and electron concentration of n equals(0.6 - 3.0)X1017 cm-3 at 77K. Thermal treatment in Hg overpressure has been founded to almost unchange the carrier concentration of the layers. The abrupt increase of the carrier mobility (up to 1.5 order of magnitude) is achieved after two-stage heat treatment in Hg overpressure.

Paper Details

Date Published: 22 February 2001
PDF: 4 pages
Proc. SPIE 4355, Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (22 February 2001); doi: 10.1117/12.417799
Show Author Affiliations
Volodymyr Kavych, Ivan Franko National Univ. in Lviv (Ukraine)
Leonid G. Mansurov, Ivan Franko National Univ. in Lviv (Ukraine)
Mariya Lozynska, Ivan Franko National Univ. in Lviv (Ukraine)
Volodymyr K. Pysarevsky, Ivan Franko National Univ. in Lviv (Ukraine)


Published in SPIE Proceedings Vol. 4355:
Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics
Fiodor F. Sizov, Editor(s)

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