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Proceedings Paper

MnHgTe epitaxial layers grown by rf sputtering in mercury glow discharge
Author(s): Leonid G. Mansurov; Volodymyr Kavych; Mariya Lozynska; Alexey V. Nemolovsky; Igor S. Virt
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Paper Abstract

The structure of MnxHg1-xTe thin layers with x equals 0.12 - 0.19 deposited on CdTe substrates with (111) and (110) orientations has been investigated. The glow radio-frequency (RF) (f equals 13.56 MHz) discharge was excited according to the diode scheme in magnetic field. The process was carried out under Hg vapor pressure from 5 (DOT) 10-3 to 8 (DOT) 10-3 Torr with quasiclosed volume. The possibility of Hg vapor pressure regulation allowed to carry out reactive process of MnHgTe layers condensation. It has been shown, that RF sputtering of MnHgTe in mercury glow discharge permits to obtain epitaxial layers with perfect structure. Optimal values of substrate temperatures which lead to epitaxial growth are from 230 to 250 degrees Celsius. The carrier concentrations and their mobilities have been determined.

Paper Details

Date Published: 22 February 2001
PDF: 4 pages
Proc. SPIE 4355, Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (22 February 2001); doi: 10.1117/12.417798
Show Author Affiliations
Leonid G. Mansurov, Ivan Franko National Univ. in Lviv (Ukraine)
Volodymyr Kavych, Ivan Franko National Univ. in Lviv (Ukraine)
Mariya Lozynska, Ivan Franko National Univ. in Lviv (Ukraine)
Alexey V. Nemolovsky, Ivan Franko National Univ. in Lviv (Ukraine)
Igor S. Virt, Drogobych Pedagogical Univ. (Ukraine)


Published in SPIE Proceedings Vol. 4355:
Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics
Fiodor F. Sizov, Editor(s)

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