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Proceedings Paper

Electron-positron annihilation in the narrow-gap semiconductor Hg1-xCdxTe
Author(s): Andrej P. Kokhanenko; Aleksander G. Korotaev; Aleksander V. Voitsekhovskii
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Paper Abstract

The angular distribution of the annihilation photons (ADAP) and positron lifetime measurements have been carried out to study of vacancy-type defects in samples of Hg1-xCdxTe (MCT). It was found that ADAP curve parameters for as-grown MCT crystal are very different from ones for low defect samples. The values of the annihilation rate in the bulk state and in the V'Hg trapped state were obtained as 3.55 ns-1 and 3.13 ns-1, respectively. The specific positron trapping rate v was estimated to be 5 (DOT) 10-7 cm3s-1.

Paper Details

Date Published: 22 February 2001
PDF: 5 pages
Proc. SPIE 4355, Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (22 February 2001); doi: 10.1117/12.417779
Show Author Affiliations
Andrej P. Kokhanenko, Tomsk State Univ. (Russia)
Aleksander G. Korotaev, Tomsk State Univ. (Russia)
Aleksander V. Voitsekhovskii, Tomsk State Univ. (Russia)


Published in SPIE Proceedings Vol. 4355:
Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics
Fiodor F. Sizov, Editor(s)

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