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Proceedings Paper

4-um negative luminescence from p-InAsSbP/n-InAs diodes in the temperature range of 20 to 180 degrees C
Author(s): M. Aidaraliev; Nonna V. Zotova; Sergey A. Karandashev; Boris A. Matveev; Maxim A. Remennyi; Nikolai M. Stus'; Georgii N. Talalakin; Volodymyr K. Malyutenko; Oleg Yu. Malyutenko
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Paper Abstract

Negative luminescence (NL) operation at approximately 4 micrometer is reported for p-InAsSbP/n-InAs reverse biased diodes with efficiency of about 60% (180 degrees Celsius). High NL conversion efficiency (25 mWcm-2A-1, 180 degrees Celsius) and remarkable value of negative apparent temperature ((Delta) T approximately equals -6 degrees Celsius) show advantages of p-InAsSbP/n-InAs NL devices for high temperature applications.

Paper Details

Date Published: 22 February 2001
PDF: 7 pages
Proc. SPIE 4355, Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (22 February 2001); doi: 10.1117/12.417777
Show Author Affiliations
M. Aidaraliev, A.F. Ioffe Physico-Technical Institute (Russia)
Nonna V. Zotova, A.F. Ioffe Physico-Technical Institute (Russia)
Sergey A. Karandashev, A.F. Ioffe Physico-Technical Institute (Russia)
Boris A. Matveev, A.F. Ioffe Physico-Technical Institute (Russia)
Maxim A. Remennyi, A.F. Ioffe Physico-Technical Institute (Russia)
Nikolai M. Stus', A.F. Ioffe Physico-Technical Institute (Russia)
Georgii N. Talalakin, A.F. Ioffe Physico-Technical Institute (Russia)
Volodymyr K. Malyutenko, Institute of Semiconductor Physics (Ukraine)
Oleg Yu. Malyutenko, Institute of Semiconductor Physics (Ukraine)


Published in SPIE Proceedings Vol. 4355:
Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics
Fiodor F. Sizov, Editor(s)

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