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Proceedings Paper

Enhancement of quantum efficiency of narrow-gap semiconductors infrared emission
Author(s): S. G. Gasan-Zade; Alexej G. Kollyukh; Leontiy F. Linnik; G. A. Shepelskii; S. V. Staryj; M. V. Strikha; Vladimir A. Boiko
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Paper Abstract

It was shown, that the uniaxial compression leads to the increase of Auger lifetimes in the narrow gap semi-conductors, and to the decrease of the radiative band to band lifetimes. The quantum efficiency can be increased up to 1 on the base of this effect. Experimental results are obtained for InSb an HgCdTe.

Paper Details

Date Published: 22 February 2001
PDF: 6 pages
Proc. SPIE 4355, Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (22 February 2001); doi: 10.1117/12.417776
Show Author Affiliations
S. G. Gasan-Zade, Institute of Semiconductor Physics (Ukraine)
Alexej G. Kollyukh, Institute of Semiconductor Physics (Ukraine)
Leontiy F. Linnik, Institute of Semiconductor Physics (Ukraine)
G. A. Shepelskii, Institute of Semiconductor Physics (Ukraine)
S. V. Staryj, Institute of Semiconductor Physics (Ukraine)
M. V. Strikha, Institute of Semiconductor Physics (Ukraine)
Vladimir A. Boiko, Institute of Semiconductor Physics (Ukraine)


Published in SPIE Proceedings Vol. 4355:
Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics
Fiodor F. Sizov, Editor(s)

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