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Proceedings Paper

Influence of light hole band nonparabolicity on CdHgTe transport properties
Author(s): Nicolas N. Berchenko; Igor I. Izhnin; Yulia S. Ilyina
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Paper Abstract

The influence of a light hole band nonparabolicity on the transport properties of CdxHg1-xTe and InSb in both intrinsic and extrinsic conductivity regions is investigated. The parameters of heavy and light holes (concentration and mobility) for homogeneous samples of p-CdxHg1-xTe (x equals 0,2 - 0,23) are determined from the Hall coefficient field dependencies. These parameters and similar data for InSb available in the literature have been compared with results of analytical computations based on the recent concepts of material parameters.

Paper Details

Date Published: 22 February 2001
PDF: 4 pages
Proc. SPIE 4355, Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (22 February 2001); doi: 10.1117/12.417774
Show Author Affiliations
Nicolas N. Berchenko, Lviv Polytechnic State Univ. (Ukraine)
Igor I. Izhnin, R&D Institute for Materials SRC Carat (Ukraine)
Yulia S. Ilyina, Lviv Polytechnic State Univ. (Ukraine)


Published in SPIE Proceedings Vol. 4355:
Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics

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