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Proceedings Paper

Polarization properties of the luminescence from silicon nanocrystals
Author(s): Joachim Diener; Dmitri I. Kovalev; Gennadi Polisski; Frederick Koch
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Paper Abstract

Polarization dependent photoluminescence (PL), time-resolved PL and PL excitation experiments are performed in order to clarify the origin of the linear polarization of the PL of porous Silicon excited by linear polarized light. It is shown that this effect, when PL is excited significantly above the detection energy, is not related to a coherent exciton alignment or selective optical excitation of those nanocrystals whose transition dipole moments are oriented parallel to the polarization vector of the exciting light. The experimental results are interpreted in the framework of a dielectric model assuming aspheric nanocrystals.

Paper Details

Date Published: 22 February 2001
PDF: 5 pages
Proc. SPIE 4355, Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (22 February 2001); doi: 10.1117/12.417772
Show Author Affiliations
Joachim Diener, Technische Univ. Muenchen (Germany)
Dmitri I. Kovalev, Technische Univ. Muenchen (Germany)
Gennadi Polisski, Technische Univ. Muenchen (Germany)
Frederick Koch, Technische Univ. Muenchen (Germany)


Published in SPIE Proceedings Vol. 4355:
Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics
Fiodor F. Sizov, Editor(s)

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