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Proceedings Paper

Photoelectrical properties of Hg1-xCdxTe epitaxial films and photodiodes with composition grading
Author(s): Z. F. Ivasiv; Vladimir V. Tetyorkin
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Paper Abstract

The photocurrent spectra are investigated in Hg1-xCdxTe liquid phase epitaxy (LPE) films and photodiodes of n + -p type on their base with composition gradient. The LPE films were grown on CdTe and CdZnTe single crystal substrates. The transformation of the photocurrent spectra caused by the composition gradient is studied both experimentally and theoretically. The analytical expressions for the spectral dependencies of the photocurrent are derived from the solution of the one-dimensional continuity equation. The calculation of the photocurrent spectra are made in which the nonparabolicity of the energy bands HgCdTe is taking into account.

Paper Details

Date Published: 22 February 2001
PDF: 5 pages
Proc. SPIE 4355, Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (22 February 2001); doi: 10.1117/12.417769
Show Author Affiliations
Z. F. Ivasiv, Institute of Semiconductor Physics (Ukraine)
Vladimir V. Tetyorkin, Institute of Semiconductor Physics (Ukraine)


Published in SPIE Proceedings Vol. 4355:
Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics
Fiodor F. Sizov, Editor(s)

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