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Proceedings Paper

Spectral responsivity of HgMnTe photodiodes
Author(s): Weiguo Sun; Ilary M. Rarenko; Sergey E. Ostapov; Leonid A. Kosyachenko
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Paper Abstract

Photodiodes with p-n junctions formed by ion etching of p-Hg1-xMnxTe (x approximately equals 0.1) are reported. The absorption curves of the crystals found from optical measurements are treated within the Kane theory for semiconductors with highly nonparabolic energy bands. The diode responsivity spectra are interpreted in the framework of model taking into account the generation of photocarriers in -regions as well as in the depletion layer. The diode photoresponsivity in the region of the photon energies below semiconductor bandgap is shown to be caused by the gentle slope of the observed absorption edge.

Paper Details

Date Published: 22 February 2001
PDF: 7 pages
Proc. SPIE 4355, Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (22 February 2001); doi: 10.1117/12.417768
Show Author Affiliations
Weiguo Sun, Luoyang Optoelectronics Institute (China)
Ilary M. Rarenko, Chernivtsi State Univ. (Ukraine)
Sergey E. Ostapov, Chernivtsi State Univ. (Ukraine)
Leonid A. Kosyachenko, Chernivtsi State Univ. (Ukraine)


Published in SPIE Proceedings Vol. 4355:
Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics
Fiodor F. Sizov, Editor(s)

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