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Proceedings Paper

Photosensitivity of porous-silicon-based heterostructures
Author(s): Liubomyr S. Monastyrskii; Volodymyr P. Savchyn; Petro P. Parandiy
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Paper Abstract

It was investigated photosensitivity of double heterostructures. Such double heterostructures were created by pressing and forming optical contact porSi/Si heterostructures and GaSe (d approximately 20 micrometer) thin single crystal substrate. An experimental investigation of GaSe/porSi/Si double heterostructures was connected with current-voltage and photovoltaic effects. It was observed wide band photovoltaic sensitivity from 0.4 to 1.2 micrometer for different heterostructures. Using energy band configuration it was explained obtained curves. GaSe/porSi/Si heterostructure were also high sensitive to mechanical stresses. It was concluded that heterojunction on the basis GaSe/porSi/Si plates may find application as wide-band photoconverters and tensosensitivity devices.

Paper Details

Date Published: 22 February 2001
PDF: 6 pages
Proc. SPIE 4355, Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (22 February 2001); doi: 10.1117/12.417763
Show Author Affiliations
Liubomyr S. Monastyrskii, Ivan Franko National Univ. in Lviv (Ukraine)
Volodymyr P. Savchyn, Ivan Franko National Univ. in Lviv (Ukraine)
Petro P. Parandiy, Ivan Franko National Univ. in Lviv (Ukraine)


Published in SPIE Proceedings Vol. 4355:
Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics

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