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Proceedings Paper

Optimization of thermal coefficient of electrical resistivity of Co-Ti-Si thin films due to laser-induced chemical reactions
Author(s): Maris Knite; Leonids Shebanov
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Paper Abstract

The CO2 laser induced optimization of the thermal coefficient of electrical resistivity in Co-Ti-Si thin films is realized. The X-ray diffraction studies of the annealed Co- Ti-Si films confirm that the changes of electrical properties are related to forming a small structure of crystalline compounds Ti5Si3 and CoSi2 in an amorphous matrix.

Paper Details

Date Published: 1 February 2001
PDF: 5 pages
Proc. SPIE 4348, Fourth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, (1 February 2001); doi: 10.1117/12.417662
Show Author Affiliations
Maris Knite, Riga Technical Univ. (Latvia)
Leonids Shebanov, Univ. of Latvia (Latvia)


Published in SPIE Proceedings Vol. 4348:
Fourth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering
Alexander I. Melker, Editor(s)

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