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Proceedings Paper

Al+ and N+ implantation in silicon carbide: a role of point defect clusters in defect evolution
Author(s): Peter V. Rybin; Dmitri V. Kulikov; Yuri V. Trushin; J. Petzoldt
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Paper Abstract

The diffusion processes in silicon carbide under Al+ and N+ ion implantation and subsequent annealing have been investigated. The influence of an internal stress field due to point defect clusters has been taken into account. The clusters of interstitials, ions, and impurities have been created during irradiation. The compression stress field due to these complexes has decreased the diffusion of interstitials. The defect profiles have been calculated which have been in good agreement with experimental RBS/C results.

Paper Details

Date Published: 1 February 2001
PDF: 7 pages
Proc. SPIE 4348, Fourth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, (1 February 2001); doi: 10.1117/12.417658
Show Author Affiliations
Peter V. Rybin, St. Petersburg State Technical Univ. (Russia)
Dmitri V. Kulikov, A.F. Ioffe Physico-Technical Institute (Russia)
Yuri V. Trushin, A.F. Ioffe Physico-Technical Institute (Russia)
J. Petzoldt, Technische Univ. Ilmenau (Germany)


Published in SPIE Proceedings Vol. 4348:
Fourth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering
Alexander I. Melker, Editor(s)

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