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Proceedings Paper

Evaluation of carbon surface diffusion on silicon by using surface phase transitions
Author(s): F. Scharmann; P. Maslarski; D. Lehmkuhl; Th. Stauden; Joerg Pezoldt
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Paper Abstract

The first stage of the interaction of carbon with the silicon surface is the formation of the carbon induced Si(100)c(4X4) and the Si(111)((root)3x(root)3)R30 degree(s) reconstruction. This stage of the carbon silicon interaction was used to determine the surface diffusion coefficient of carbon on reconstructed (100) and (111) silicon surfaces with in situ reflection high energy electron diffraction. The parameters were determined by using a phenomenological model describing the time dependence of the surface phase transition.

Paper Details

Date Published: 1 February 2001
PDF: 5 pages
Proc. SPIE 4348, Fourth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, (1 February 2001); doi: 10.1117/12.417645
Show Author Affiliations
F. Scharmann, Technische Univ. Ilmenau (Germany)
P. Maslarski, Technische Univ. Ilmenau (Germany)
D. Lehmkuhl, Technische Univ. Ilmenau (Germany)
Th. Stauden, Technische Univ. Ilmenau (Germany)
Joerg Pezoldt, Technische Univ. Ilmenau (Germany)


Published in SPIE Proceedings Vol. 4348:
Fourth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering
Alexander I. Melker, Editor(s)

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