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Proceedings Paper

3D model of epitaxial growth on {111} surfaces of diamond-like crystals
Author(s): Igor G. Neizestny; Alexej V. Zverev; Natalia L. Shwartz; Zoja Sh. Yanovitskaya
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Paper Abstract

3D Monte Carlo model of epitaxial growth and sublimation process on {111} surfaces of diamond like crystals was developed. Using original rapid algorithm we could simulate crystal fragments with hundreds atomic layers in the depth. One monolayer could contain up to 105 atoms. The model permits voids and overhanging formation. Arbitrary initial surface relief could be prescribed. The results of simulation are the computer film, demonstrating evolution of surface morphology, and data showing the degree of surface roughness. This model was successfully applied for simulation of homoepitaxy on (111) porous silicon surfaces.

Paper Details

Date Published: 1 February 2001
PDF: 4 pages
Proc. SPIE 4348, Fourth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, (1 February 2001); doi: 10.1117/12.417642
Show Author Affiliations
Igor G. Neizestny, Institute of Semiconductor Physics (Russia)
Alexej V. Zverev, Institute of Semiconductor Physics (Russia)
Natalia L. Shwartz, Institute of Semiconductor Physics (Russia)
Zoja Sh. Yanovitskaya, Institute of Semiconductor Physics (Russia)


Published in SPIE Proceedings Vol. 4348:
Fourth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering
Alexander I. Melker, Editor(s)

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