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Proceedings Paper

High-frequency method of SiC plate crystals characterization
Author(s): Anatoly V. Shturbin; Ilya E. Titkov; Vadim Yu. Panevin; Renata F. Witman
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Paper Abstract

In this paper we present a simple non-destructive method for testing SiC plate single-crystals of any size and shape. The method is based on measuring the impedance changes of an inductive ferrite-cored coil due to placing the sample into the core gap. The method is valid for any SiC polytypes, though we used 6H one. Using this method we have obtained and discussed a conductivity as a function of doping level (Nd-Na) for 6H-SiC Lely crystals. The conductivity measurements were carried out with alternating current of 747 kHz frequency. The sensitivity of the method is limited by minimal conductivity 1 (Ohm(DOT)cm)-1 (that is corresponding to (Nd-Na) approximately 2 (DOT) 1016 cm-3 for 6H-SiC:N Lely crystals).

Paper Details

Date Published: 1 February 2001
PDF: 3 pages
Proc. SPIE 4348, Fourth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, (1 February 2001); doi: 10.1117/12.417637
Show Author Affiliations
Anatoly V. Shturbin, St. Petersburg State Technical Univ. (Russia)
Ilya E. Titkov, St. Petersburg State Technical Univ. (Russia)
Vadim Yu. Panevin, St. Petersburg State Technical Univ. (Russia)
Renata F. Witman, A.F. Ioffe Physico-Technical Institute (Russia)


Published in SPIE Proceedings Vol. 4348:
Fourth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering
Alexander I. Melker, Editor(s)

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