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Proceedings Paper

Room-temperature single-hole silicon memory cell
Author(s): Nikolai T. Bagraev; Alexei D. Bouravleuv; Leonid E. Klyachkin; Anna M. Malyarenko; Serguei A. Rykov
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Paper Abstract

We present the findings of the room temperature operation that is demonstrated by the single-hole silicon memory cell in which the single-hole silicon transistor is used as an electrometer. This memory cell is performed on the basis of the quantum wire and the quantum dot which is self-assembly formed as a multiple-tunnel junction by short-time diffusion of boron into the Si(100)-wafer. The single-hole device obtained exhibits the Coulomb oscillations and the memory effects as a hysteresis in CV characteristics which are respectively revealed by varying the gate and drain-source voltage in the process of the local tunneling spectroscopy measurements.

Paper Details

Date Published: 1 February 2001
PDF: 4 pages
Proc. SPIE 4348, Fourth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, (1 February 2001); doi: 10.1117/12.417634
Show Author Affiliations
Nikolai T. Bagraev, A.F. Ioffe Physico-Technical Institute (Russia)
Alexei D. Bouravleuv, A.F. Ioffe Physico-Technical Institute (Russia)
Leonid E. Klyachkin, A.F. Ioffe Physico-Technical Institute (Russia)
Anna M. Malyarenko, A.F. Ioffe Physico-Technical Institute (Russia)
Serguei A. Rykov, St. Petersburg State Technical Univ. (Russia)


Published in SPIE Proceedings Vol. 4348:
Fourth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering
Alexander I. Melker, Editor(s)

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