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Proceedings Paper

alpha-C:H films for photonic structure fabrication
Author(s): Vitoldas Kopustinskas; Viktoras Grigaliunas; Dalius Jucius; Sarunas Meskinis; Mindaugas Margelevicius; Rolandas Tomasiunas
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Paper Abstract

(alpha) -C:H films were applied to fabricate photonic band gap (PBG) structures in the silicon substrate by SF6N2-based reactive ion etching (RIE). The influence of RIE parameters on (alpha) C:H films structure and etching rate was investigated int his study. It is shown that RIE rate for (alpha) -C:H films changes from 26 nm/min to 38 nm/min with the integrated intensity ratios ID/IG varied from 0.65 to 1.1. It is evident that increase in etching rate is determined by increasing quantity of sp2 bonding in the synthesized (alpha) -C:H films. RIE does not change structure of the (alpha) -C:H masking films. However, non- uniform character of RIE takes place due to the non- homogeneous graphite clusters in (alpha) -C:H masking films. However, non-uniform character of RIE takes place due to the non-homogeneous graphite clusters in (alpha) -C:H masking films. By changing parameters of silicon etching, such as RF power density, pressure and negative bias voltage, anisotropy was varied in wide range and microstructures of different shape were obtained.

Paper Details

Date Published: 8 March 2001
PDF: 6 pages
Proc. SPIE 4318, Smart Optical Inorganic Structures and Devices, (8 March 2001); doi: 10.1117/12.417614
Show Author Affiliations
Vitoldas Kopustinskas, Kaunas Univ. of Technology (Lithuania)
Viktoras Grigaliunas, Kaunas Univ. of Technology (Lithuania)
Dalius Jucius, Kaunas Univ. of Technology (Lithuania)
Sarunas Meskinis, Kaunas Univ. of Technology (Lithuania)
Mindaugas Margelevicius, Kaunas Univ. of Technology (Lithuania)
Rolandas Tomasiunas, Vilnius Univ. (Lithuania)


Published in SPIE Proceedings Vol. 4318:
Smart Optical Inorganic Structures and Devices
Steponas P. Asmontas; Jonas Gradauskas, Editor(s)

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