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Proceedings Paper

Al-nGaAs ohmic contact formation by H2SeO3 treatment and annealing
Author(s): Sarunas Meskinis; Kestutis Slapikas; R. Gudaitis
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Paper Abstract

In this research the influence of annealing on current- voltage characteristics of selenious acid (H2SeO3) treated Al-nGaAs contacts was investigated. Linear Al-nGaAs contacts were obtained by combination of selenious acid treatment and annealing. Dependence of the annealing and selenious acid treatment effects on nGaAs substrate dopants concentration was observed. Specific resistivity of the Al- nGaAs ohmic contact as low as 7.3(DOT)10-6 (Omega) (DOT)cm2 was achieved. Formation of the Al-nGaAs ohmic contact was explained by the interface Se reactions with both GaAs and Al.

Paper Details

Date Published: 8 March 2001
PDF: 5 pages
Proc. SPIE 4318, Smart Optical Inorganic Structures and Devices, (8 March 2001); doi: 10.1117/12.417613
Show Author Affiliations
Sarunas Meskinis, Kaunas Univ. of Technology (Lithuania)
Kestutis Slapikas, Kaunas Univ. of Technology (Lithuania)
R. Gudaitis, Kaunas Univ. of Technology (Lithuania)

Published in SPIE Proceedings Vol. 4318:
Smart Optical Inorganic Structures and Devices
Steponas P. Asmontas; Jonas Gradauskas, Editor(s)

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