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Proceedings Paper

Development of a novel class of far-IR detectors based on heavily doped AIVBVI epitaxial films
Author(s): V. V. Osipov; Z. Dashevsky
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Paper Abstract

AIVBVI (chalcogenides of IV-group elements) semiconductors are well-known materials having applications in infrared optoelectronics. Major efforts in the field of physics of the condensed matter are aimed at elucidating the influence of defects and impurities on the properties of semiconductor materials. In many cases, impurities can dramatically change the properties of semiconductor materials. Pb1-x-ySnxGeyTe is a well- known narrow-band-gap semiconductor with usually high (n>=1016 cm-3) intrinsic defects. The introduction of indium into these solid solutions establishes an impurity level that is a function of the Sn and Ge concentration and of temperature. For x>0.22, the In impurity level lies within the forbidden band (dielectric state) and exhibits the attendant sharp drop in the electron density. In the dielectric state (temperatures below 25 K) the In-doped alloys are unique in that they are photosensitive with a decrease in the electrical resistivity and an increase of carrier lifetime by several orders of magnitude (10-3-104 s) depending on the temperature. The long relaxation time of the non- equilibrium concentration of electrons, manifested as persistent photoconductivity (PPC) effect. One of the advantages of PPC effect is the possibility of increasing the signal/noise ratio by an increase of the charge integration time. Therefore one of the major challenges in developing array photodetectors operating in the television standard with a frame time ~ carrier lifetime is to insure signal accumulation in each element of the array. As it is seen we have unequal possibility to realize novel type of array photodetectors over a wide range of the IR spectrum (up to 30 micrometers ), in which each element provides radiation detection and its accumulation.

Paper Details

Date Published: 8 March 2001
PDF: 9 pages
Proc. SPIE 4318, Smart Optical Inorganic Structures and Devices, (8 March 2001); doi: 10.1117/12.417600
Show Author Affiliations
V. V. Osipov, Russian Science Ctr. Orion (Russia)
Z. Dashevsky, Ben-Gurion Univ. of the Negev (Israel)


Published in SPIE Proceedings Vol. 4318:
Smart Optical Inorganic Structures and Devices
Steponas P. Asmontas; Jonas Gradauskas, Editor(s)

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