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Proceedings Paper

Toward far- and mid-IR intraband lasers based on hot carrier intervalley/real-space transfer in multiple quantum well systems
Author(s): Vladimir Ya. Aleshkin; Alexander A. Andronov; A. V. Antonov; E. V. Demidov; Alexander E. Dubinov; Vladimir I. Gavrilenko; Dmitry G. Revin; B. N. Zvonkov; N. B. Zvonkov; E. A. Uskova; Leonid E. Vorobjev; D. A. Firsov; S. N. Danilov; Ilya E. Titkov; V. A. Shalygin; Alexey E. Zhukov; Alexey R. Kovsh; Victor M. Ustinov
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Paper Abstract

Discussion of ways to achieve mid and far IR intraband lasing just by lateral electric field carrier (electron or hole) heating in multiple quantum well (MQW) structures is given. It is argued that the Gunn diodes are low frequency indirect transition lasers based on hot electron population inversion arising under electron intervalley transfer. In the MQW structures direct optical transitions exist while hot carrier population inversion can be achieved due to inter-valley/real space transfer. The two MQW structures are considered in this work: GaAs/AlAs and GaAs/InGaAs systems. In the first the hot electron (Gamma) -X intervalley/real space transfer from GaAs layers to AlAs layers provides population inversion while in the second the inversion can arise due to interlevel/interlayer transfer. Evaluations via the Monte-Carlo simulation of the hot electron phenomena in some of the structures are given and observation of the hot carrier phenomena of the type (including far and mid IR emission and absorption) are presented. Consideration of the appropriate laser design which provides also a way to cope with the low frequency (Gunn type) current oscillations is given.

Paper Details

Date Published: 8 March 2001
PDF: 12 pages
Proc. SPIE 4318, Smart Optical Inorganic Structures and Devices, (8 March 2001); doi: 10.1117/12.417598
Show Author Affiliations
Vladimir Ya. Aleshkin, Institute for Physics of Microstructures (Russia)
Alexander A. Andronov, Institute for Physics of Microstructures (Russia)
A. V. Antonov, Institute for Physics of Microstructures (Russia)
E. V. Demidov, Institute for Physics of Microstructures (Russia)
Alexander E. Dubinov, Institute for Physics of Microstructures (Russia)
Vladimir I. Gavrilenko, Institute for Physics of Microstructures (Russia)
Dmitry G. Revin, Institute for Physics of Microstructures (Russia)
B. N. Zvonkov, Nizhni Novgorod State Univ. (Russia)
N. B. Zvonkov, Nizhni Novgorod State Univ. (Russia)
E. A. Uskova, Nizhni Novgorod State Univ. (Russia)
Leonid E. Vorobjev, St. Petersburg State Technical Univ. (Russia)
D. A. Firsov, St. Petersburg State Technical Univ. (Russia)
S. N. Danilov, St. Petersburg State Technical Univ. (Russia)
Ilya E. Titkov, St. Petersburg State Technical Univ. (Russia)
V. A. Shalygin, St. Petersburg State Technical Univ. (Russia)
Alexey E. Zhukov, A.F. Ioffe Physico-Technical Institute (Russia)
Alexey R. Kovsh, A.F. Ioffe Physico-Technical Institute (Russia)
Victor M. Ustinov, A.F. Ioffe Physico-Technical Institute (Russia)


Published in SPIE Proceedings Vol. 4318:
Smart Optical Inorganic Structures and Devices
Steponas P. Asmontas; Jonas Gradauskas, Editor(s)

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