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Proceedings Paper

Photomodulation dynamics of exciton reflectance in GaAs/AlAs single-quantum-well structures
Author(s): J. Kavaliauskas; B. Cechavicius; G. Krivaite; A. Galickas; V. I. Kadushkin; E. L. Shangina; Ju N. Gorbunova
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Paper Abstract

The excitation-energy dependences and relaxation times of photoinduced changes of excitonic lines in type-I GaAs/AlAs QW structures are studied by the photo- and wavelength- modulated reflectance spectroscopies. The optical data indicate that photoinduced broadening/quenching of excitonic lines dominates in the modulation spectra under photoexcitation within the QW by He-Ne laser. It was found that characteristic time of these photoinduced changes varies form milliseconds at 300 K to seconds at 120 K and reduces under illumination above the AlAs band gap. Moreover, different time constants and their temperature dependences were obtained for QW- and buffer layer-related optical features. It was suggested that photoinduced changes of excitonic spectra could be associated with the T- X electron transfer effects and creation of excess holes in the QW under He-Ne excitation.

Paper Details

Date Published: 8 March 2001
PDF: 6 pages
Proc. SPIE 4318, Smart Optical Inorganic Structures and Devices, (8 March 2001); doi: 10.1117/12.417596
Show Author Affiliations
J. Kavaliauskas, Semiconductor Physics Institute (Lithuania)
B. Cechavicius, Semiconductor Physics Institute (Lithuania)
G. Krivaite, Semiconductor Physics Institute (Lithuania)
A. Galickas, Semiconductor Physics Institute (Lithuania)
V. I. Kadushkin, Ryazan State Pedagogical Univ. (Russia)
E. L. Shangina, Ryazan State Pedagogical Univ. (Russia)
Ju N. Gorbunova, Ryazan State Pedagogical Univ. (Russia)

Published in SPIE Proceedings Vol. 4318:
Smart Optical Inorganic Structures and Devices
Steponas P. Asmontas; Jonas Gradauskas, Editor(s)

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