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Proceedings Paper

Nonlinear optical characterization of single-crystalline GaN by Z-scan technique
Author(s): Vaidas Pacebutas; A. Stalnionis; Arunas Krotkus; M. Leszczynski; Piotr Perlin; T. Suski
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Paper Abstract

Nonlinear optical characteristics of single crystalline GaN were measured at the wavelength of 530 nm using Z-scan techniques. Two photon absorption coefficient at that wavelength was found to be 9 cm/GW, whereas the bound and free electron nonlinear refractive indexes were estimated as 2.5 X 10-14 cm2/W and 5 X 10-22 cm3, respectively. Moreover, single color dynamical Z-scan measurement was used for the determination of the photoexcited carrier trapping time, which was estimated as 1 ns.

Paper Details

Date Published: 8 March 2001
PDF: 5 pages
Proc. SPIE 4318, Smart Optical Inorganic Structures and Devices, (8 March 2001); doi: 10.1117/12.417589
Show Author Affiliations
Vaidas Pacebutas, Semiconductor Physics Institute (Lithuania)
A. Stalnionis, Semiconductor Physics Institute (Lithuania)
Arunas Krotkus, Semiconductor Physics Institute (Lithuania)
M. Leszczynski, UNIPRESS (Poland)
Piotr Perlin, UNIPRESS (Poland)
T. Suski, UNIPRESS (Poland)

Published in SPIE Proceedings Vol. 4318:
Smart Optical Inorganic Structures and Devices
Steponas P. Asmontas; Jonas Gradauskas, Editor(s)

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