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Proceedings Paper

Role of localization effects in GaN and InGaN
Author(s): M. Godlewski; E. M. Goldys
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Paper Abstract

Strong localization effects are observed in epilayers of GaN and InGaN. We relate them to microstructure characteristics of samples studied. The same mechanism of localization is shown to be the dominant in GaN and in InGaN. Influence of strong localization effects on light emission properties is discussed.

Paper Details

Date Published: 8 March 2001
PDF: 10 pages
Proc. SPIE 4318, Smart Optical Inorganic Structures and Devices, (8 March 2001); doi: 10.1117/12.417584
Show Author Affiliations
M. Godlewski, Institute of Physics (Poland)
E. M. Goldys, Macquarie Univ. (Australia)

Published in SPIE Proceedings Vol. 4318:
Smart Optical Inorganic Structures and Devices
Steponas P. Asmontas; Jonas Gradauskas, Editor(s)

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