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Proceedings Paper

Effect of temperature on the loss of the As-S-Se and Ge-As-Se-Te chalcogenide glass fibers
Author(s): Vinh Q. Nguyen; Jasbinder Singh Sanghera; Frederic H. Kung; Pablo C. Pureza; Robert E. Miklos; Ishwar D. Aggarwal; Isabel K. Lloyd
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Paper Abstract

The change in the absorption loss relative to room temperature of the IR-transmitting sulfur-based (As-S-Se) and tellurium-based (Ge-As-Se-Te) glass fibers in the temperature range of-110°C? T? 110°C was investigated. For the sulfur-based (As-S-Se) glass fibers, the change in loss relative to room temperature was slightly affected by temperature in the wavelength region of 1-5 ?m. For ? ? 6 ?m, the change in loss was mainly due to multiphonon absorption. For the tellurium-based (Ge-As-Se-Te) glass fibers, the attenuation increased significantly at T 40°C. This is mainly attributed to thermally activated free carriers associated with the semi-metallic character ofthe Te atom. For ? ? 4.2 ?m, the loss due to electronic and free carrier absorption was strongly affected by temperature. In the wavelength region of 5 - 11 ?m, the loss was mainly due to free carrier absorption. Beyond ?? 1 1 ?m, multiphonon absorption dominated the loss spectrum at T ? 60°C while free carrier absorption contributed mainly to the total loss at T 80°C.

Paper Details

Date Published: 1 March 2001
PDF: 13 pages
Proc. SPIE 4204, Fiber Optic Sensor Technology II, (1 March 2001); doi: 10.1117/12.417422
Show Author Affiliations
Vinh Q. Nguyen, Naval Research Lab. (United States)
Jasbinder Singh Sanghera, Naval Research Lab. (United States)
Frederic H. Kung, Univ. of Maryland Research Foundation (United States)
Pablo C. Pureza, Naval Research Lab. (United States)
Robert E. Miklos, SFA Inc. (United States)
Ishwar D. Aggarwal, Naval Research Lab. (United States)
Isabel K. Lloyd, Univ. of Maryland/College Park (United States)


Published in SPIE Proceedings Vol. 4204:
Fiber Optic Sensor Technology II
Brian Culshaw; Michael A. Marcus; Brian Culshaw; James A. Harrington; Michael A. Marcus; Mohammed Saad, Editor(s)

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