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Proceedings Paper

Photovoltaic response in poly(3-octylthiophene)-based metal-semiconductor-metal diodes
Author(s): Emmanouil Kymakis; Gehan A. J. Amaratunga; Ioannis Alexandrou; Manish Chhowalla; William I. Milne
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Paper Abstract

We report here on properties of Metal-Semiconductor-Metal cells based on poly(3-octylthiophene), P3OT. The diodes were fabricated by spin-coating of poly (3-octylthiophene) on an indium-tin oxide coated glass substrate and an aluminum top contact was evaporated onto the film. The optical and electrical characteristics of the diodes were studied. A power efficiency of 10-4 was obtained at AM 1.5 conditions, while the power efficiency reached its maximum of 6% under illumination at 256 nm at an intensity of 2 (mu) W/cm2.

Paper Details

Date Published: 5 February 2001
PDF: 5 pages
Proc. SPIE 4108, Organic Photovoltaics, (5 February 2001); doi: 10.1117/12.416939
Show Author Affiliations
Emmanouil Kymakis, Univ. of Cambridge (United Kingdom)
Gehan A. J. Amaratunga, Univ. of Cambridge (United Kingdom)
Ioannis Alexandrou, Univ. of Cambridge (United Kingdom)
Manish Chhowalla, Univ. of Cambridge (United Kingdom)
William I. Milne, Univ. of Cambridge (United Kingdom)


Published in SPIE Proceedings Vol. 4108:
Organic Photovoltaics
Zakya H. Kafafi, Editor(s)

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