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Proceedings Paper

Structure and characterization of a white up-emitting OLED on silicon for microdisplays
Author(s): Tom Feng; Tariq A. Ali; E. S. Ramakrishnan; Richard A. Campos; Webster E. Howard
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Paper Abstract

We have developed highly efficient, top-emitting white OLED structures suitable for black-and-white or full color microdisplay applications. White light emission was obtained from both singly doped and doubly doped emitter layer structures. However, the double-dopant structure, employing fluorescent blue and red-emitting dyes, generated much higher luminous efficiency than that of the single dopant structure incorporating only the red dopant. For top- emitting, white OLED devices with the double-dopant structure, we have achieved luminous efficiencies of 974 cd/m2, 4.9 cd/A, 1.9 lm/W and an external quantum efficiency of 1.8% when driven at 20 mA/cm2 and 7.9 V. The device has an electroluminescence turn-on voltage of 2.2 V. After turn-on, the current varies as the 14th power of the voltage. The projected operational half-life of these devices is greater than 6000 hrs. This estimate is based on devices that have been continuously driven at a constant current of 20 mA/cm2 for more than 3000 hrs. Based on an up-emitting, double-dopant white OLED structure, we have developed an SXGA-resolution, black-and-white active matrix OLED (AMOLED) on silicon microdisplay. This AMOLED-on-Si has demonstrated real-time video with 256 gray levels and consumes less than 400 mW of power at a brightness of 200 cd/m2.

Paper Details

Date Published: 2 February 2001
PDF: 7 pages
Proc. SPIE 4105, Organic Light-Emitting Materials and Devices IV, (2 February 2001); doi: 10.1117/12.416907
Show Author Affiliations
Tom Feng, eMagin Corp. (United States)
Tariq A. Ali, eMagin Corp. (United States)
E. S. Ramakrishnan, eMagin Corp. (United States)
Richard A. Campos, eMagin Corp. (United States)
Webster E. Howard, eMagin Corp. (United States)

Published in SPIE Proceedings Vol. 4105:
Organic Light-Emitting Materials and Devices IV
Zakya H. Kafafi, Editor(s)

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