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Proceedings Paper

Breakthrough and the future phase-change optical disk technology
Author(s): Takeo Ohta
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Paper Abstract

Materials such as GeTe-Sb2Te3-Sb chalcogenide active layer, ZnS-SiO2 fine grain structure (<2nm) dielectric protection layer and Nitrogen doped active layer realized million overwrite cycle characteristics. Phase-change optical disk produces PD, CD-RW and high density rewritable DVD in multimedia world. Phase-change technology, large reflectivity difference signal component has the capability of multi-level recording. Dual layer like volumetric recording technology and the wide wavelength response characteristics from near infra- red 780 nm to blue 400 nm has a capability of future high density recording performance around 100 Gbit/in2 and more.

Paper Details

Date Published: 7 February 2001
PDF: 8 pages
Proc. SPIE 4085, Fifth International Symposium on Optical Storage (ISOS 2000), (7 February 2001); doi: 10.1117/12.416851
Show Author Affiliations
Takeo Ohta, Matsushita Electric Industrial Co., Ltd. (United States)


Published in SPIE Proceedings Vol. 4085:
Fifth International Symposium on Optical Storage (ISOS 2000)
Fuxi Gan; Lisong Hou, Editor(s)

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