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Proceedings Paper

Amorphous silicon crystallization by a long-pulse excimer laser
Author(s): Paolo Di Lazzaro; Sarah Bollanti; Francesca Bonfigli; Francesco Flora; Gualtiero Giordano; Tommaso Letardi; Daniele Murra; Cheng En Zheng; Alessandro Baldesi
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Paper Abstract

In this paper we summarise the results of the annealing of a-Si films done at ENEA Frascati by the XeC1 laser facility Hercules and the preliminary results of the characterisation work done on the first Italian industrial high-energy excimer laser, named Hercules L. Some information will be also given on a novel process to obtain homogeneous, large grain poly-Si and on a new homogeniser with zoom.

Paper Details

Date Published: 25 January 2001
PDF: 5 pages
Proc. SPIE 4184, XIII International Symposium on Gas Flow and Chemical Lasers and High-Power Laser Conference, (25 January 2001); doi: 10.1117/12.413991
Show Author Affiliations
Paolo Di Lazzaro, Ente per le Nuove tecnologie, l'Energia e l'Ambiente (Italy)
Sarah Bollanti, Ente per le Nuove tecnologie, l'Energia e l'Ambiente (Italy)
Francesca Bonfigli, Ente per le Nuove tecnologie, l'Energia e l'Ambiente (Italy)
Francesco Flora, Ente per le Nuove tecnologie, l'Energia e l'Ambiente (Italy)
Gualtiero Giordano, Ente per le Nuove tecnologie, l'Energia e l'Ambiente (Italy)
Tommaso Letardi, Ente per le Nuove tecnologie, l'Energia e l'Ambiente (Italy)
Daniele Murra, Ente per le Nuove tecnologie, e l'Energia l'Ambiente (Italy)
Cheng En Zheng, El.En. SpA (Italy)
Alessandro Baldesi, El.En. SpA (Italy)


Published in SPIE Proceedings Vol. 4184:
XIII International Symposium on Gas Flow and Chemical Lasers and High-Power Laser Conference
Antonio Lapucci; Marco Ciofini, Editor(s)

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