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Proceedings Paper

Progress in carbon nitride synthesis by pulsed-laser deposition
Author(s): ZhongMin Ren; Yongfeng Lu; Z. F. He
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Paper Abstract

Synthesis of carbon nitride has been an important topic in materials science since 1993. Ion-assisted pulsed laser deposition is proven to be a good method to deposit carbon nitride thin films. Both amorphous and crystal (beta) -C3N4 layers can be deposited on many substrates. A standard experimental set-up comprises a pulsed KrF excimer laser that is used to ablate the graphite target and a nitrogen ion beam bombarding simultaneously on the substrate. A variety of experimental derivatives have been developed based on pulsed laser deposition. The deposited thin films have been characterized by Auger Electron Spectroscope, X-ray photoelectron spectroscopy, mass time of flight spectrum, optical emission spectrum, Rutherford backscattering, high energy backscattering, Raman spectroscopy, Fourier transform IR spectroscopy, Ellipsometry, electron diffraction, scanning tunneling microscope and atomic force microscope. Investigations are carried out to identify the binding structure, nitrogen content, electronic properties, optical properties and crystal structures of the deposited thin films.

Paper Details

Date Published: 30 January 2001
PDF: 8 pages
Proc. SPIE 4157, Laser-Assisted Microtechnology 2000, (30 January 2001); doi: 10.1117/12.413764
Show Author Affiliations
ZhongMin Ren, National Univ. of Singapore (Singapore)
Yongfeng Lu, National Univ. of Singapore (United States)
Z. F. He, National Univ. of Singapore (Singapore)

Published in SPIE Proceedings Vol. 4157:
Laser-Assisted Microtechnology 2000
Vadim P. Veiko, Editor(s)

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