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Proceedings Paper

Laser-pulse-induced chemical reactions and surface patterning in Co-Si and Co-Ti-Si films: investigations by x-ray diffraction and atomic force microscopy
Author(s): Maris Knite; Leonids Shebanov; Valentinas J. Snitka
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Paper Abstract

X-ray diffraction patterns reflected from the laser treated crystalline CoSi2 layer, the measurements of surface electrical resistance and atomic force microscopy micrographs confirm the 'generation-diffusion-deformational instabilities' model of formation of defect ordered structures of various types. The CO2 laser induced decrease of the thermal coefficient of resistance to zero in Co-Ti-Si films is realized. X-ray diffraction studies of the treated films confirm that the obtained (alpha) changes with number of laser pulses are caused due to solid phase reaction Co + 2Si equals CoSi2 and 5Ti + 3Si equals Ti5Si3.

Paper Details

Date Published: 30 January 2001
PDF: 4 pages
Proc. SPIE 4157, Laser-Assisted Microtechnology 2000, (30 January 2001); doi: 10.1117/12.413758
Show Author Affiliations
Maris Knite, Riga Technical Univ. (Latvia)
Leonids Shebanov, Univ. of Latvia (Latvia)
Valentinas J. Snitka, Kaunas Univ. of Technology (Lithuania)

Published in SPIE Proceedings Vol. 4157:
Laser-Assisted Microtechnology 2000
Vadim P. Veiko, Editor(s)

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