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Proceedings Paper

Defect dispositioning using mask printability on attenuated phase-shift production photomasks
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Paper Abstract

This paper examines the effects of mask printability of various OPC defect types on a MoSi APSM mask using an MSM-100 AIMS tool operating at 248nm as a printability prediction tool. Printability analysis will be used to address differences in intensity, image capture wavelength, defocus, defect size, type, and placement on two substrate materials. Defect correlation to photomask CD error, aerial image intensity error, and MEEF on high-end KrF photomasks will also be studied.

Paper Details

Date Published: 22 January 2001
PDF: 9 pages
Proc. SPIE 4186, 20th Annual BACUS Symposium on Photomask Technology, (22 January 2001); doi: 10.1117/12.410771
Show Author Affiliations
Justin W. Novak, Photronics, Inc. (United States)
Benjamin George Eynon Jr., Photronics, Inc. (United States)
Eric Poortinga, Rochester Institute of Technology (United States)
Anja Rosenbusch, Etec Systems, Inc., an Applied Materials Co. (United States)
Yair Eran, Etec Systems, Inc., an Applied Materials Co. (Israel)


Published in SPIE Proceedings Vol. 4186:
20th Annual BACUS Symposium on Photomask Technology
Brian J. Grenon; Giang T. Dao, Editor(s)

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