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Proceedings Paper

Development of photomask fabrication for 100-nm design rule
Author(s): Takashi Inoue; Takuro Horibe; Akihiro Maeda; Yoshiyuki Tanaka
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Paper Abstract

130-100nm rule lithography has rendered the mask error enhancement factor (MEF) larger and required photomasks to have tight CD accuracy. We adopted the current best photomask technology to meet lOOnm-design rule. We used a negative CAR resist, the 50kV EB machine, a new puddle development using the NS (No impact Stream) nozzle, and NLD(neutral loop discharge) dry etching. Consequently, we obtained the best performance in the full scanner area and we achieved the target CD uniformity.

Paper Details

Date Published: 22 January 2001
PDF: 8 pages
Proc. SPIE 4186, 20th Annual BACUS Symposium on Photomask Technology, (22 January 2001); doi: 10.1117/12.410766
Show Author Affiliations
Takashi Inoue, NEC Corp. (Japan)
Takuro Horibe, NEC Corp. (Japan)
Akihiro Maeda, NEC Corp. (Japan)
Yoshiyuki Tanaka, NEC Corp. (Japan)

Published in SPIE Proceedings Vol. 4186:
20th Annual BACUS Symposium on Photomask Technology
Brian J. Grenon; Giang T. Dao, Editor(s)

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