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Proceedings Paper

Double-step process for manufacturing reticle to reduce gate CD variation
Author(s): Makoto Kozuma; Masaya Komatsu; Rieko Arakawa; Seiji Kubo; Tatsuya Takahashi; John Jensen; Hyun-Suk Bang; Il-Ho Lee; Cheol Shin; Hong-Seok Kim; Keun-Won Park
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Paper Abstract

In low k1 lithography, reticle quality decides the process capability. Therefore, we must minimize CD errors on the reticle plate. Double Step process (DS process) is a unique method to improve CD uniformity of line patterns on the active region of poly layer reticle. In DS process, poly layer design is divided into the active region and the non-active region. And then, these two regions are processed individually. By using this procedure, pattern density variation across the reticle plate is reduced when making line patterns on the active region. As a result, the loading effect of the dry etching process reduced, and CD uniformity of these patterns can be improved. Using this technique of reticle fabrication, CD uniformity could be improved. Particularly, the range of CD variation of line patterns in logic cells was drastically reduced from 29nm to 20nm.

Paper Details

Date Published: 22 January 2001
PDF: 6 pages
Proc. SPIE 4186, 20th Annual BACUS Symposium on Photomask Technology, (22 January 2001); doi: 10.1117/12.410759
Show Author Affiliations
Makoto Kozuma, LSI Logic Japan Semiconductor Inc. (Japan)
Masaya Komatsu, LSI Logic Japan Semiconductor Inc. (Japan)
Rieko Arakawa, LSI Logic Japan Semiconductor Inc. (Japan)
Seiji Kubo, LSI Logic Japan Semiconductor Inc. (Japan)
Tatsuya Takahashi, LSI Logic Japan Semiconductor Inc. (Japan)
John Jensen, LSI Logic Corp. (United States)
Hyun-Suk Bang, DuPont Photomasks Korea Ltd. (South Korea)
Il-Ho Lee, DuPont Photomasks Korea Ltd. (South Korea)
Cheol Shin, DuPont Photomasks Korea Ltd. (South Korea)
Hong-Seok Kim, DuPont Photomasks, Inc. (South Korea)
Keun-Won Park, DuPont Photomasks Korea Ltd. (United States)


Published in SPIE Proceedings Vol. 4186:
20th Annual BACUS Symposium on Photomask Technology
Brian J. Grenon; Giang T. Dao, Editor(s)

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