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Proceedings Paper

Dry etching of Ta absorber for EUVL masks
Author(s): Eiichi Hoshino; Taro Ogawa; Naoya Hirano; Hiromasa Hoko; Masashi Takahashi; Hiromasa Yamanashi; Akira Chiba; Masaaki Ito; Shinji Okazaki
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Paper Abstract

To obtain a vertical profile for the Ta absorber pattern of an EUVL (Extreme Ultraviolet Lithography) mask, the dry etching conditions were reconsidered. The experiments employed ECR (electron cyclotron resonance) plasma etching and Si wafers coated with a 40-nm-thick SiO2 buffer layer and a 100-nm-thick Ta absorber layer. Two-step etching was performed to obtain vertical pattern profiles. In the first step, the surface region of the Ta absorber was etched with a mixture of BCl3 and Cl2 gases to reduce the residue from the native oxide film. Then, the absorber was etched with Cl2 gas at a higher RF (radio frequency) bias power to obtain a vertical profile and smooth sidewalls. Furthermore, the thermal behavior of a standard 6- inch-square 250-mil. substrate was also simulated. It was found that the temperature rise of the substrate could be kept under 150 deg. Celsius.

Paper Details

Date Published: 22 January 2001
PDF: 7 pages
Proc. SPIE 4186, 20th Annual BACUS Symposium on Photomask Technology, (22 January 2001); doi: 10.1117/12.410755
Show Author Affiliations
Eiichi Hoshino, Association of Super-Advanced Electronics Technologies (Japan)
Taro Ogawa, Association of Super-Advanced Electronics Technologies (Japan)
Naoya Hirano, Association of Super-Advanced Electronics Technologies (Japan)
Hiromasa Hoko, Association of Super-Advanced Electronics Technologies (Japan)
Masashi Takahashi, Association of Super-Advanced Electronics Technologies (Japan)
Hiromasa Yamanashi, Association of Super-Advanced Electronics Technologies (Japan)
Akira Chiba, Association of Super-Advanced Electronics Technologies (Japan)
Masaaki Ito, Association of Super-Advanced Electronics Technologies (Japan)
Shinji Okazaki, Association of Super-Advanced Electronics Technologies (Japan)


Published in SPIE Proceedings Vol. 4186:
20th Annual BACUS Symposium on Photomask Technology
Brian J. Grenon; Giang T. Dao, Editor(s)

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