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Proceedings Paper

Neolithography Consortium: a progress report
Author(s): James E. Potzick
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Paper Abstract

The role of process simulation is becoming an increasingly important part of microlithography process control and photomask metrology as wafer feature sizes become smaller than the exposure wavelength, because the pattern transfer from photomask to wafer is nonlinear due to diffraction and other effects.

Paper Details

Date Published: 22 January 2001
PDF: 7 pages
Proc. SPIE 4186, 20th Annual BACUS Symposium on Photomask Technology, (22 January 2001); doi: 10.1117/12.410747
Show Author Affiliations
James E. Potzick, National Institute of Standards and Technology (United States)


Published in SPIE Proceedings Vol. 4186:
20th Annual BACUS Symposium on Photomask Technology
Brian J. Grenon; Giang T. Dao, Editor(s)

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