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Proceedings Paper

Pushing SRAM densities beyond 0.13-um technology in the year 2000
Author(s): Orest Bula; Rebecca D. Mih; Eric Jasinski; Dennis Hoyniak; Andrew Lu; Jay Harrington; Anne E. McGuire
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Paper Abstract

For any given technology in the logic foundry business it is highly desirable to offer a dense SRAM design which can be manufactured using the same mask and wafer toolsets as the base design. This paper discusses the lithographic issues related to imaging a pseudo-0.11 um technology within a 0.13 um ground rule, including optical proximity correction, design, mask making issues, and comparison of top-down SEM to simulation. To achieve a dense SRAM and quick turn around on design shrinks, simulation and experimental feedback are key. In this study, SRAM cells were redesigned, and a well calibrated resist and etch bias model, in conjunction with a fast micro lithographic aerial image simulator and mask model, were used to predict and optimize the printed shapes through all critical levels. One of the key issues is the ability to correlate and feedback experimental data into the resist simulation. Experimental results using attenuated phase shift masks and state-of-the-art resist process technology are compared to the simulation.

Paper Details

Date Published: 22 January 2001
PDF: 11 pages
Proc. SPIE 4186, 20th Annual BACUS Symposium on Photomask Technology, (22 January 2001); doi: 10.1117/12.410741
Show Author Affiliations
Orest Bula, IBM Microelectronics Div. (United States)
Rebecca D. Mih, IBM Microelectronics Div. (United States)
Eric Jasinski, IBM Microelectronics Div. (United States)
Dennis Hoyniak, IBM Microelectronics Div. (United States)
Andrew Lu, IBM Microelectronics Div. (United States)
Jay Harrington, IBM Microelectronics Div. (United States)
Anne E. McGuire, IBM Microelectronics Div. (United States)

Published in SPIE Proceedings Vol. 4186:
20th Annual BACUS Symposium on Photomask Technology
Brian J. Grenon; Giang T. Dao, Editor(s)

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