Share Email Print
cover

Proceedings Paper

Evaluation of loading effect of NLD dry etching: II
Author(s): Tatsuya Fujisawa; Takayuki Iwamatsu; Koji Hiruta; Hiroaki Morimoto; Noriyuki Harashima; Takaei Sasaki; Mutsumi Hara; Kazuhide Yamashiro; Yasushi Okubo; Yoichi Takehana
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

The dry etching process by using NLD (Neutral Loop Discharge Plasma) has been evaluated. The loading effect was measured applying the CAR (Chemically Amplified Resist) negative resist process in the low pressure etching condition, where an excellent CD (Critical Dimension) uniformity was obtained.

Paper Details

Date Published: 22 January 2001
PDF: 4 pages
Proc. SPIE 4186, 20th Annual BACUS Symposium on Photomask Technology, (22 January 2001); doi: 10.1117/12.410736
Show Author Affiliations
Tatsuya Fujisawa, Semiconductor Leading Edge Technologies, Inc. (Japan)
Takayuki Iwamatsu, Semiconductor Leading Edge Technologies, Inc. (Japan)
Koji Hiruta, Semiconductor Leading Edge Technologies, Inc. (Japan)
Hiroaki Morimoto, Semiconductor Leading Edge Technologies, Inc. (Japan)
Noriyuki Harashima, ULVAC Coating Corp. (Japan)
Takaei Sasaki, ULVAC Coating Corp. (Japan)
Mutsumi Hara, HOYA Corp. (Japan)
Kazuhide Yamashiro, HOYA Corp. (Japan)
Yasushi Okubo, HOYA Corp. (Japan)
Yoichi Takehana, HOYA Corp. (Japan)


Published in SPIE Proceedings Vol. 4186:
20th Annual BACUS Symposium on Photomask Technology
Brian J. Grenon; Giang T. Dao, Editor(s)

© SPIE. Terms of Use
Back to Top