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Proceedings Paper

Develop process optimization for CD uniformity improvement
Author(s): Jae-Cheon Shin; Joon-Il Won; Ho-Yong Jung; Mun-Sik Kim; Yong-Kyoo Choi; Oscar Han
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Paper Abstract

It is required that CD uniformity in the mask fabrication process should be controlled much more tightly for manufacturing mask to meet below 0.13um design rule of photolithography. The first factors that affect CD uniformity on mask are resist thickness, range, and uniformity of coating temperature, etc. The second factors are fogging effect happening during E-beam writing and CD error caused by E-beam stitching in local area. So, It is on checking and evaluating new equipments as well as suitable process condition. The third is develop process factor that the space CD of mask center area is larger than that of edge area in spin type develop process. Various process recipes and chemical spraying methods is also on applying and evaluating to solve the problem like this. The forth is dry etch factors which are CD error resulted from the unstable plasma condition, inappropriate etch time, error factor from the poor resist selectivity, and CD difference caused by non-optimized exhaust condition in etcher. In this paper, the third factor is discussed, and the method to optimize develop process is studied and evaluated

Paper Details

Date Published: 22 January 2001
PDF: 9 pages
Proc. SPIE 4186, 20th Annual BACUS Symposium on Photomask Technology, (22 January 2001); doi: 10.1117/12.410735
Show Author Affiliations
Jae-Cheon Shin, Hyundai Electronics Industries Co., Ltd. (South Korea)
Joon-Il Won, Hyundai Electronics Industries Co., Ltd. (South Korea)
Ho-Yong Jung, Hyundai Electronics Industries Co., Ltd. (South Korea)
Mun-Sik Kim, Hyundai Electronics Industries Co., Ltd. (South Korea)
Yong-Kyoo Choi, Hyundai Electronics Industries Co., Ltd. (South Korea)
Oscar Han, Hyundai Electronics Industries Co., Ltd. (South Korea)


Published in SPIE Proceedings Vol. 4186:
20th Annual BACUS Symposium on Photomask Technology
Brian J. Grenon; Giang T. Dao, Editor(s)

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